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| PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 31 17 120 120 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6 (0.21) Max. 1.2 --- 40 --- Units C/W g (oz) www.irf.com 1 1229//00 IRG4PC30F Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- Temperature Coeff. of Breakdown Voltage -- 0.69 -- 1.59 Collector-to-Emitter Saturation Voltage -- 1.99 -- 1.7 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance U 6.1 10 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 17A -- IC = 31A See Fig.2, 5 V -- IC = 17A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 17A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 51 77 IC = 17A 7.9 12 nC VCC = 400V See Fig. 8 19 28 VGE = 15V 21 -- 15 -- TJ = 25C ns 200 300 IC = 17A, VCC = 480V 180 270 VGE = 15V, RG = 23 0.23 -- Energy losses include "tail" 1.18 -- mJ See Fig. 10, 11, 13, 14 1.41 2.0 20 -- TJ = 150C, 16 -- IC = 17A, VCC = 480V ns 290 -- VGE = 15V, RG = 23 350 -- Energy losses include "tail" 2.5 -- mJ See Fig. 13, 14 13 -- nH Measured 5mm from package 1100 -- VGE = 0V 74 -- pF VCC = 30V See Fig. 7 14 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC30F 50 F o r b o th : Triangular w ave: 40 D uty c y c le : 5 0 % T J = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w er D is s ip a tio n = 2 4 W C la m p v o lta g e : 8 0 % o f ra te d Load Current (A) 30 S q u a re w a v e : 60 % of ra ted volta ge 20 10 Id e a l d io d e s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 I C , Collector-to-Emitter Current (A) 100 TJ = 25C I C , Collector-to-Emitter Current (A) 100 T J = 150C TJ = 150C T J = 25C 10 10 1 1 V G E = 15V 20s PULSE WIDTH 10 A 1 5 6 7 8 9 V C C = 50V 5s PULSE WIDTH A 10 11 12 13 VC E , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30F 40 V G E = 15 V 2.5 V G E = 15V 80s PULSE WIDTH I C = 34A Maxim um D C Collector C urrent (A ) 30 V C E , Collector-to-Emitter Voltage (V) 2.0 20 I C = 17A 1.5 10 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T C , C ase Tem perature (C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k T J = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30F 2000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce 1600 Cres = Cce Coes = Cce + Cgc SHORTED 20 V C E = 400V I C = 17A V G E , Gate-to-Emitter Voltage (V) 16 C, Capacitance (pF) 1200 C ies 12 800 8 C oes 400 4 C res 0 1 10 A 100 0 0 10 20 30 40 50 A 60 V C E , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.50 Total Switching Losses (mJ) Total Switching Losses (mJ) VC C VG E TJ IC = 480V = 15V = 25C = 17A 10 R G = 23 V G E = 15V V C C = 480V I C = 34A 1.45 I C = 17A 1 1.40 I C = 8.5A 1.35 1.30 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30F 6.0 5.0 4.0 I C , C ollecto r-to -Em itter Cu rrent (A) Total Switching Losses (mJ) RG TJ V CC V GE = = = = 23 150C 480V 15V 1000 VG E E 2 0V G= T J = 12 5 C 100 S A FE O P E R A TIN G A R E A 3.0 2.0 10 1.0 0.0 0 10 20 30 40 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC30F L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PC30F Case Outline and Dimensions TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) * 3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com |
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